Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-29
2008-01-29
Pham, Hoai v (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S240000, C257SE21664
Reexamination Certificate
active
07323382
ABSTRACT:
A decoupling capacitor is provided for a semiconductor device and may include a first low dielectric insulator layer and a low resistance conductor formed into at least two interdigitized patterns on the surface of the first low dielectric insulator in a single interconnect plane. A high dielectric constant material may be provided between the two patterns. A circuit for testing a plurality of these capacitors is also provided which includes a charge monitoring circuit, a coupling circuit and a control circuit.
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Bernstein Kerry
Bracchitta John A.
Cote William J.
Ning Tak H.
Pricer Wilbur D.
Canale Anthony
International Business Machines - Corporation
McGinn IP Law Group PLLC
Pham Hoai v
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