Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-06-06
2010-02-16
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S685000, C257S686000, C257S723000, C257S773000, C257S778000, C257S786000, C257SE23015, C257SE23020, C257SE27137, C257SE23144, C257SE27161, C257SE25006, C257SE25013, C257SE25021, C257SE25027, C257SE23085
Reexamination Certificate
active
07663245
ABSTRACT:
An interposer may include a base substrate supporting an array of conductive lands. The conductive land may have an identical shape and size. The conductive lands may be provided at regular intervals on the base substrate. The conductive land pitch may be determined such that adjacent conductive lands may be electrically connected by one end of an electric connection member. Alternatively, each conductive land may provide respective bonding locations to which ends of two different electric connection members may be bonded. A stacked chip package may include an interposer that may be fabricated by cutting an interposer to size. In the stacked chip package, electrical connections may be made through the interposer between an upper semiconductor chip and a package substrate, between the upper semiconductor chip and a lower semiconductor chip, and/or between the lower semiconductor chip and the package substrate.
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Clark Jasmine J
Harness Dickey & Pierce PLC
Samsung Electronics Co,. Ltd.
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