Interpoly dielectric process

Details Interpoly dielectric process Interpoly dielectric process

1997-03-31

1998-11-17

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438763, H01L 218247

Patent

active

058367721

ABSTRACT:
A process is provided for fabricating a nonvolatile memory cell. According to the process, source and drain regions are formed on a first conductivity-type semiconductor substrate; and insulating layer is formed on the source and drain regions; a floating gate is formed on the insulating layer; a dielectric composite is formed on the floating gate; and a control gate is formed on the dielectric composite. The dielectric composite includes a bottom layer of silicon dioxide formed on the floating gate; a layer of silicon nitride formed on the bottom silicon dioxide layer; and a top layer of silicon dioxide formed on the nitride layer such that the silicon nitride layer of the composite is thinner than the top or the bottom silicon dioxide layer.

REFERENCES:
patent: 4577390 (1986-03-01), Haken
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4616402 (1986-10-01), Mori
patent: 4630086 (1986-12-01), Sato et al.
patent: 4720323 (1988-01-01), Sato
patent: 4769340 (1988-09-01), Chang et al.
patent: 4808261 (1989-02-01), Ghidini et al.
patent: 4926222 (1990-05-01), Koss et al.
patent: 4943836 (1990-07-01), Mori
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5457061 (1995-10-01), Hong et al.
patent: 5496747 (1996-03-01), Hong
Mori, S. et al., "Reliability Aspects of 100A Inter-Poly Dielectrics for HIRH Density VLSIs", IEEE 1986 Symposium on VLSI Technology, San Diego, May 28-30, pp. 71-72.
Mori, S. et al., "Poly-Oxide/Nitride/Oxide Structures for Highly Reliable EPROM Cells", VLSI Symposium Digest of Technical Papers (1984), pp. 40-41.
DiMaria, D.J. et al., "Interface Effects and High Conductivity in Oxides Grown from Polycrystalline Silicon", Applied Physics Letters, vol. 27, No. 9, Nov. 1, 1975, pp. 505-507.
Fukuda, H. et al., "Novel N20 Oxynitridation Technology for Forming Highly Reliable EEPROM Tunnel Oxide Films", IEEE Device Letters, vol. 12, No. 11, Nov. 1991, pp. 587-589.
Hori, T. et., "Electrical and Physical Properties of Ultrathin Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing", IEEE Transactions on Electron Devices, vol. 36, No. 2, Feb. 1989, pp. 340-349.

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