Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-03-08
2005-03-08
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S734000, C257S738000, C257S741000
Reexamination Certificate
active
06864578
ABSTRACT:
Disclosed is a reinforced bond pad structure having nonplanar dielectric structures and a metallic bond layer conformally formed over the nonplanar dielectric structures. The nonplanar dielectric structures are substantially reproduced in the metallic bond layer so as to form nonplanar metallic structures. Surrounding each of the nonplanar metallic structures is a ring of dielectric material which provides a hard stop during probing of the bond pad so as to limit the amount of bond pad that can be removed during probing.
REFERENCES:
patent: 5703408 (1997-12-01), Ming-Tsung et al.
patent: 6143396 (2000-11-01), Saran et al.
patent: 6198170 (2001-03-01), Zhao
patent: 6232662 (2001-05-01), Suran
patent: 6306750 (2001-10-01), Huang et al.
patent: 6400021 (2002-06-01), Cho
patent: 6448650 (2002-09-01), Saran et al.
patent: 6563216 (2003-05-01), Kimura et al.
patent: 20010051426 (2001-12-01), Pozder et al.
patent: 20020068385 (2002-06-01), Ssu-Pin Ma et al.
patent: 20040004284 (2004-01-01), Lee et al.
Angell David
Beaulieu Frederic
Hisada Takashi
Kelly Adreanne
McKnight Samuel Roy
Blecker Ira D.
Fenty Jesse A.
Thomas Tom
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