Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-03-12
2009-02-24
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S227000, C365S229000
Reexamination Certificate
active
07495982
ABSTRACT:
An internal voltage generation device includes a plurality of output nodes; a bit line precharge voltage generation unit for generating a bit line precharge voltage; a first voltage drop unit for transferring the bit line precharge voltage to a first output node after decreasing the bit line precharge voltage by a first voltage drop amount in response to a test mode signal; and a second voltage drop unit for transferring the bit line precharge voltage to a second output node after decreasing the bit line precharge voltage by a second voltage drop amount in response to the test mode signal, wherein the second voltage drop amount is greater than the first voltage drop amount.
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Ho Hoai V
Hynix / Semiconductor Inc.
McDermott Will & Emery LLP
Radke Jay
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