Internal voltage generating circuit for preventing voltage...

Details Internal voltage generating circuit for preventing voltage... Internal voltage generating circuit for preventing voltage...

2011-07-12

2011-07-12

Fureman, Jared J (Department: 2836)

Electronic digital logic circuitry

With test facilitating feature

C365S201000

Reexamination Certificate

active

07977966

ABSTRACT:
An internal voltage generating circuit is utilized to perform a TDBI (Test During Burn-in) operation for a semiconductor device. The internal voltage generating circuit produces an internal voltage at a high voltage level, as an internal voltage, in not only a standby section but also in an active section in response to a test operation signal activated in a test operation. Accordingly, dropping of the internal voltage in the standby section of the test operation and failure due to open or short circuiting are prevented. As a result, reliability of the semiconductor chip, by preventing the generation of latch-up caused by breakdown of internal circuits, is assured.

REFERENCES:
patent: 6347381 (2002-02-01), McClure
patent: 7307896 (2007-12-01), Doyle et al.
patent: 2002-197896 (2007-07-01), None
patent: 10-2001-0105442 (2001-11-01), None
Korean Office Action issued in Korean Patent Application No. KR 2006-0040696 dated Apr. 30, 2007.

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