Internal voltage generating circuit and semiconductor memory...

Details Internal voltage generating circuit and semiconductor memory... Internal voltage generating circuit and semiconductor memory...

2008-06-05

2010-11-23

Dinh, Son (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189110, C365S211000

Reexamination Certificate

active

07839700

ABSTRACT:
An internal voltage generating circuit includes a voltage divider for generating a level signal by voltage-dividing first internal voltage, a pull-down signal generator for generating a pull-down signal, which has a level adjusted according to a temperature, in response to the level signal, a pull-up signal generator for generating a pull-up signal, which has a level adjusted according to the temperature, in response to the level signal, and a driving unit for driving second internal voltage in response to the pull-down signal and the pull-up signal. Driving force of the driving unit for driving the second internal voltage is changed according to the temperature.

REFERENCES:
patent: 6452437 (2002-09-01), Takeuchi et al.
patent: 7606099 (2009-10-01), Chung
patent: 2008/0042736 (2008-02-01), Byeon
patent: 10-2002-0039809 (2002-05-01), None
patent: 10-2007-0080883 (2007-08-01), None
patent: 10-2007-0115712 (2007-12-01), None
patent: 10-0784909 (2007-12-01), None

Affiliated with

Also associated with

Rating

Internal voltage generating circuit and semiconductor memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Internal voltage generating circuit and semiconductor memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Internal voltage generating circuit and semiconductor memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4251842