Static information storage and retrieval – Read/write circuit – Testing
Patent
1992-08-18
1994-09-20
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Testing
365226, 3072966, G11C 2900
Patent
active
053495594
ABSTRACT:
A circuit for generating an internal voltage to be supplied to memory elements of a semiconductor memory chip during normal operation and for providing an external voltage to the memory elements during a burn-in test operation. The circuit may be constructed with a driver circuit (50) which receives an external voltage and is controlled to generate the internal voltage. A comparator (300) compares the internal voltage to a first reference voltage to produce a control signal G2 to control the driver circuit (50). An external voltage detector (100) compares a second reference voltage to the external voltage to generate control signal B2. A driver control circuit (200) is enabled by control signal B2, if the external voltage is less than the second reference voltage, to pass control signal G2 to the driver circuit and thereby enable generation of the internal voltage to be equal to, or less than, the operating voltage of the semiconductor memory chip. The driver control circuit is disabled by control signal B2 if the external voltage is greater than the second reference voltage, thereby preventing the control signal G2 of the comparator from controlling conduction by the driver circuit (50) to enable output of the external voltage exhibiting an elevated amplitude to the memory elements for burn-in test operation.
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Lim Hyung-Kyu
Park Yong-bo
Bushnell Robert E.
LaRoche Eugene R.
Niranjan F.
Samsung Electronics Co,. Ltd.
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