Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge
Patent
1998-11-25
2000-02-29
Nelms, David
Static information storage and retrieval
Read/write circuit
Accelerating charge or discharge
36518525, 36518533, G11C 700
Patent
active
060317744
ABSTRACT:
A memory device includes first, second, and third discharging units, which are connected to a negative voltage node, for discharging the negative voltage to a ground voltage through three steps which are sequentially conductive. The first discharging unit discharges the negative voltage in response to a first signal and a second signal. It does so when the negative voltage is a first voltage level. The second discharging unit discharges the negative voltage in response to the second signal and a third signal. It does so when the negative voltage is a second voltage level. The third discharging unit discharges the negative voltage in response to a fourth signal and a fifth signal. It does so when the negative voltage is a third voltage level.
REFERENCES:
patent: 5703820 (1997-12-01), Kohmo
Lam David
Nelms David
Samsung Electronics Co,. Ltd.
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