Static information storage and retrieval – Systems using particular element – Semiconductive
Reexamination Certificate
2005-01-11
2005-01-11
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Semiconductive
C365S063000, C365S158000, C365S225700
Reexamination Certificate
active
06842369
ABSTRACT:
An intermesh memory device includes memory components that each have a determinable resistance value and electronic switches that each control current through one or more of the memory components such that a potential is applied to the memory components. A first electronic switch of the intermesh memory device is electrically coupled to an input of a memory component and a second electronic switch is electrically coupled to an output of the memory component. The first electronic switch and the second electronic switch are configured together to apply a potential to the memory component.
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Fricke Peter
Koll Andrew
Van Brocklin Andrew L.
Dinh Son T.
Hewlett--Packard Development Company, L.P.
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