Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
06936897
ABSTRACT:
A method of forming an isolation structure comprising forming n-type areas and/or p-type areas implanted respectively therein on a first surface of a substrate. A pad oxide film is grown on the first surface of the substrate covering the p-wells and/or n-wells. A diffusion barrier(s) is deposited on the first surface of the substrate and a second surface of the substrate to form an encapsulated structure. The encapsulated structure is annealed to activate the n-type and/or p-type areas. A mask material is applied over the diffusion barrier on the first surface of the substrate to define active device areas and a dry etch process is used to etch away the unmasked potions of the diffusion barrier. The mask material is stripped and a field oxide is grown on the first surface of the substrate. A portion of the field oxide and all of the diffusion barrier is removed, resulting in active areas surrounded by a field isolation structure.
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S. Wolf et al., Silicon Processing for ther VLSI Era, vol. 1, Lattice Press, 1986, pp. 262-265, a full text.
Jeng Nanseng
Pan Pai-Hung
Fahmy Wael
Mai Anh D.
Micro)n Technology, Inc.
TraskBritt
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