Intermediate layer lithography

Details Intermediate layer lithography Intermediate layer lithography

1996-07-12

1998-09-08

Martin, Roland

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask is multilayer resist

430316, 438717, G03C 500

Patent

active

058040889

ABSTRACT:
An isotropic or partially isotropic etch shrinks lithographically patterned photoresist (211, 212) to yield reduced linewidth patterned photoresist (213, 214) with a buried antireflective coating also acting as an etchstop or a sacrificial layer. The reduced linewidth pattern (213, 214) provide an etch mask for subsequent anisotropic etching of underlying material such as polysilicon (206) or metal or insulator or ferroelectric.

REFERENCES:
patent: 4092210 (1978-05-01), Hoepfner
patent: 4557797 (1985-12-01), Fuller et al.
patent: 4820611 (1989-04-01), Arnold et al.
patent: 5106786 (1992-04-01), Brady et al.
patent: 5326727 (1994-07-01), Kook et al.
patent: 5525542 (1996-06-01), Maniar et al.
VLSI Technology, 1985, pp. 307-310.

Affiliated with

Also associated with

Rating

Intermediate layer lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Intermediate layer lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Intermediate layer lithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1278964