Interlevel dielectrics with reduced dielectric constant

Details Interlevel dielectrics with reduced dielectric constant Interlevel dielectrics with reduced dielectric constant

1998-02-13

2000-10-03

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438695, 438787, H01L 2131

Patent

active

06127285&

ABSTRACT:
A structure and method to further reduce the dielectric constant (capacitance) of high density plasma chemical vapor deposited silicon dioxide (SiO2 12). The dielectric constant of voids (i.e. air pockets) is close to k=1.0, and therefore the microvoids reduce the effective dielectric constant of the silicon dioxide 12. Use of HDPCVD conditions avoids residual hydrogen, which would degrade the dielectric constant.

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Wolf, S. "Silicon Processing For The VLSI Era" vol. 2 (1990). Lattice Press. Sunset, CA. pp. 237-238, 1990.

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