Interlayer insulation film used for multilayer interconnect...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S633000, C438S778000

Reexamination Certificate

active

07098129

ABSTRACT:
An interlayer insulation film for multilayer interconnect of a semiconductor integrated circuit is formed by forming a first insulation film on a substrate by plasma CVD using a silicon-containing hydrocarbon gas; and continuously forming a second insulation film on the first insulation film at a thickness less than the first insulation film in situ by plasma CVD using a silicon-containing hydrocarbon gas and an oxidizing gas. The second insulation film has a hardness of 6 GPa or higher and is used as a polishing stop layer.

REFERENCES:
patent: 6165898 (2000-12-01), Jang et al.
patent: 6374770 (2002-04-01), Lee et al.
patent: 6383917 (2002-05-01), Cox
patent: 6593247 (2003-07-01), Huang et al.
patent: 6599847 (2003-07-01), Jang et al.
patent: 6602779 (2003-08-01), Li et al.
patent: 6713382 (2004-03-01), Pangrle et al.
patent: 6762127 (2004-07-01), Boiteux et al.
patent: 6764939 (2004-07-01), Yoshitaka
patent: 2002/0106891 (2002-08-01), Kim et al.
patent: 2003/0042605 (2003-03-01), Andideh et al.
patent: 2003/0235980 (2003-12-01), Huang et al.
patent: 1 122 770 (2001-08-01), None
patent: 1 148 539 (2001-10-01), None
patent: 1 201 795 (2002-05-01), None
patent: WO 99/55526 (1999-11-01), None
patent: WO 01/94448 (2001-12-01), None
Hean Ju Lee, et al., “The mechanical properties of the SiOC(-H) composite thin films with a low dielectric constant” Surface & Coating Technology, Joint International Plasma Sysmposium of the 6thAsia-Pacific Conference on Plasma Science & Techology, Jeju Island, South Korea, vol. 171 No. 1-3, Jul. 1, 2002-Jul. 4, 2002, Elsevier, Switzerland, pp. 296, 300.
U.S. Appl. No. 10/351,669, filed Jan. 24, 2003, Tsuji et al.

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