Interlayer dielectric with a composite dielectric stack

Details Interlayer dielectric with a composite dielectric stack Interlayer dielectric with a composite dielectric stack

1996-12-19

1999-09-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

438633, 438624, 438626, 438637, 438789, 438780, H01L 21302, H01L 21463

Patent

active

059536357

ABSTRACT:
A method of forming an interlayer dielectric on a semiconductor device is disclosed. First, a phosphorous doped oxide layer is deposited on the semiconductor device to fill gaps and provide phosphorous for gettering. Then, an undoped oxide layer is deposited and planarized using chemical mechanical polishing (CMP). The undoped oxide layer is denser than the phosphorous doped oxide layer, so the undoped oxide layer can be polished more uniformly than the phosphorous doped oxide layer and can serve as a polish stop for a subsequent tungsten plug polish. Also, the denser undoped oxide layer serves as a more effective moisture barrier than the doped oxide layer. Overall fabrication process complexity can be reduced by performing both oxide depositions in a single operation with no intervening densification or CMP steps.

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