Intergrated circuit memory devices including capacitors on cappi

Details Intergrated circuit memory devices including capacitors on cappi Intergrated circuit memory devices including capacitors on cappi

1997-06-16

1999-04-20

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 2329

Patent

active

058959475

ABSTRACT:
Integrated circuit memory devices are fabricated by forming a first contact hole in a cell array region and a second contact hole in a peripheral circuit region. Conductive material is simultaneously placed in the first and second contact holes such that the conductive material in the first contact hole electrically contacts a memory cell transistor in the cell array region and the conductive material in the second contact hole electrically contacts the peripheral circuit transistor in the peripheral circuit region. A capping layer is included, and the peripheral circuit region wiring layer and the capacitor storage electrode is formed directly on the capping layer. Improved performance and reduced step height may thereby be obtained.

REFERENCES:
patent: 5744833 (1998-04-01), Chao
Yoon et al., "A New Capacitor on Metal (COM) Cell for Beyond 256 Mbit DRAM", 1994 Symposium on VLSI Technology Digest of Technology Papers, 1994, pp. 135-136.

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