Interfacial layer for use with high k dielectric materials

Details Interfacial layer for use with high k dielectric materials Interfacial layer for use with high k dielectric materials

2008-01-22

2008-01-22

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S471000, C438S478000, C438S585000, C257S310000, C257S407000, C257S410000, C257S532000, C257S616000

Reexamination Certificate

active

07320931

ABSTRACT:
Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 Å, and is less than the critical thickness for pure germanium on silicon. The germanium layer serves as an intermediate layer between the silicon substrate and the high k gate layer, which is deposited on the germanium layer. The germanium layer helps to avoid the development of an oxide interfacial layer during the application of the high k material. Application of the germanium intermediate layer in a semiconductor structure results in a high k gate functionality without the drawbacks of series capacitance due to oxide impurities. The germanium layer further improves mobility.

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