Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage
Reexamination Certificate
2008-07-29
2008-07-29
Cox, Cassandra (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Specific identifiable device, circuit, or system
With specific source of supply or bias voltage
C327S537000
Reexamination Certificate
active
07405611
ABSTRACT:
To save power consumption in a semiconductor integrated circuit2A increased due to a leak current caused by a variation in a manufacturing process, temperature, and a power supply voltage.A semiconductor integrated circuit2A, a leak current detection circuit3, a comparison operation circuit4and an applied voltage output circuit5A are provided. The semiconductor integrated circuit2A has a circuit body21including a plurality of functional MOSFETs for performing predetermined functional operations, and a monitor circuit22A including a plurality of monitor NMOSFETs23for monitoring properties of the functional MOSFETs. The leak current detection circuit3detects leak data corresponding to leak currents from the monitor NMOSFETs23, and outputs the detected leak data. The comparison operation circuit4extracts, from a plurality of pieces of leak data, one piece of leak data minimizing a leak current in the circuit body21, and outputs the extracted leak data as applied voltage data. The applied voltage output circuit5A sets and outputs a source-drain voltage to be applied to the functional MOSFETs based on the applied voltage data.
REFERENCES:
patent: 5680359 (1997-10-01), Jeong
patent: 6075404 (2000-06-01), Shindoh et al.
patent: 6166577 (2000-12-01), Mizuno et al.
patent: 6380798 (2002-04-01), Mizuno et al.
patent: 6469568 (2002-10-01), Toyoyama et al.
patent: 6867637 (2005-03-01), Miyazaki et al.
patent: 6946865 (2005-09-01), Mizuno et al.
patent: 7002397 (2006-02-01), Kubo et al.
patent: 2001/0007537 (2001-07-01), Agawa et al.
patent: 2002/0044007 (2002-04-01), Mizuno et al.
patent: 2002/0057545 (2002-05-01), Maehara et al.
patent: 2002/0075086 (2002-06-01), Kuroda
patent: 2002/0180513 (2002-12-01), Toyoyama et al.
patent: 2005/0093611 (2005-05-01), Fujita et al.
patent: 2005/0116765 (2005-06-01), Sakiyama et al.
patent: 2006/0091936 (2006-05-01), Ikenaga et al.
Keshavarzi, A., et al. “Effectiveness of Reverse Body Bias for Leakage Control In Scaled Dual Vt CMOS ICs.” ISLP ED'01 pp. 207-212.
Cox Cassandra
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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