Interface layer between dual polycrystalline silicon layers

Details Interface layer between dual polycrystalline silicon layers Interface layer between dual polycrystalline silicon layers

2007-08-14

2007-08-14

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S625000, C438S655000, C438S653000, C257SE21582

Reexamination Certificate

active

11135492

ABSTRACT:
A structure interfaces dual polycrystalline silicon layers. The structure includes a first layer of polycrystalline silicon and a metal interface layer formed on a surface of the first layer of polycrystalline silicon. The structure further includes a second layer of polycrystalline silicon formed on a surface of the interface layer.

REFERENCES:
patent: 4398335 (1983-08-01), Lehrer
patent: 5043300 (1991-08-01), Nulman
patent: 5861340 (1999-01-01), Bai et al.

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