Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-04-24
2007-04-24
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S476000, C257SE27060
Reexamination Certificate
active
11083912
ABSTRACT:
The present invention provides, in one aspect, a method of fabricating a gate oxide layer on a microelectronics substrate. This embodiment comprises forming a stress inducing pattern on a backside of a microelectronics wafer and growing a gate oxide layer on a front side of the microelectronics wafer in the presence of a tensile stress caused by the stress inducing pattern.
REFERENCES:
patent: 6531364 (2003-03-01), Gardner et al.
Bu Haowen
Chakravarthi Srinivasan
Krishnan Anand T.
Brady III W. James
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tsai H. Jey
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