Interdigitated capacitor and method of manufacturing thereof

Details Interdigitated capacitor and method of manufacturing thereof Interdigitated capacitor and method of manufacturing thereof

2005-08-09

2005-08-09

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000

Reexamination Certificate

active

06927125

ABSTRACT:
The present invention provides a method of manufacturing an interdigitated semiconductor device. In one embodiment, the method comprises simultaneously forming first electrodes adjacent each other on a substrate, forming a dielectric layer between the first electrodes, and creating a second electrode between the first electrodes, the second electrode contacting the dielectric layer between the first electrodes to thereby form adjacent interdigitated electrodes. An interdigitated capacitor and a method of manufacturing an integrated circuit having an interdigitated capacitor are also disclosed.

REFERENCES:
patent: 4409608 (1983-10-01), Yoder
patent: 5393373 (1995-02-01), Jun et al.
patent: 5527730 (1996-06-01), Kayaoka et al.
patent: 5744853 (1998-04-01), Quek et al.
patent: 6150706 (2000-11-01), Thakur et al.
patent: 6383858 (2002-05-01), Gupta et al.
patent: 6436787 (2002-08-01), Shih et al.
Parent U.S. Appl. No. 09/929,188 filed Aug. 14, 2001 to Christopher DW Jones, et al, entitled “Interdigitated Capacitor and Method of Manufacturing Thereof”; allowed Jan. 5, 2004.

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