Interconnects using metal spacers and method for forming same

Details Interconnects using metal spacers and method for forming same Interconnects using metal spacers and method for forming same

1998-06-24

1999-07-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, 438687, 438648, 438669, 438596, 438622, 438625, H01L 2348

Patent

active

059267380

ABSTRACT:
The preferred embodiment of the present invention provides increased conductivity between interlevel interconnection lines. The preferred embodiment uses sidewall spacers on the sides of the interconnection lines to increase the contact area between interconnection lines and interconnect studs. This increase in area improves connection resistance and allows further device scaling without unacceptable decreases in the conductivity of the connection, and without adding significant expense in the fabrication process.

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