Interconnection structure of semiconductor device

Details Interconnection structure of semiconductor device Interconnection structure of semiconductor device

1995-06-07

1997-02-04

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257388, 257763, 257768, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

056001703

ABSTRACT:
An interconnection structure of a semiconductor device with a gate electrode, an active region provided in the vicinity of the gate electrode and a first buried layer in a contact hole exposing the gate electrode and the active region. The contact hole is easily formed, and the first buried layer has a substantially low interconnection resistance value.

REFERENCES:
patent: 4890141 (1989-12-01), Tang et al.
patent: 4931411 (1990-06-01), Tigelaar et al.
patent: 5459354 (1995-10-01), Hara
patent: 5475240 (1995-12-01), Sakamoto

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