Interconnection structure in semiconductor device

Details Interconnection structure in semiconductor device Interconnection structure in semiconductor device

1992-04-27

1994-06-28

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257623, 257752, H01L 2354, H01L 2992

Patent

active

053249704

ABSTRACT:
An interconnection structure in a semiconductor device for connecting a lower conductive layer to an upper conductive layer comprises a projection which is left by selectively etching a semiconductor substrate to a certain depth, a lower conductive layer formed inwardly from at least part of the surface of the projection, a surrounding structure formed around the projection, and an upper conductive layer formed on the upper surfaces of the surrounding structure and connected to at least part of the surface of the lower conductive layer. The planarization of the upper conductive layer is improved, preventing contact failure.

REFERENCES:
patent: 4512074 (1985-04-01), Sasaki
patent: 4884121 (1989-11-01), Ishii
patent: 4994893 (1991-02-01), Ozaki et al.
patent: 5057896 (1991-10-01), Gotou

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