Interconnecting conductive layers of memory devices

Details Interconnecting conductive layers of memory devices Interconnecting conductive layers of memory devices

2007-02-13

2007-02-13

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000, C257SE21691

Reexamination Certificate

active

11007138

ABSTRACT:
Field-effect transistors, select gates, and select lines have first and second conductive layers separated by an interlayer dielectric layer. A conductive strap is disposed on either side of the first and second conductive layers. Each strap electrically interconnects the first and second conductive layers.

REFERENCES:
patent: 6187636 (2001-02-01), Jeong
patent: 6261907 (2001-07-01), Chang
patent: 6777294 (2004-08-01), Park

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