Interconnect with multiple layers of conductive material...

Details Interconnect with multiple layers of conductive material... Interconnect with multiple layers of conductive material...

2006-02-21

2006-02-21

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07001840

ABSTRACT:
An interconnect structure is formed with a plurality of layers of a conductive material with a grain boundary between any two adjacent layers of the conductive material. Such grain boundaries between layers of conductive material act as shunt by-pass paths for migration of atoms of the conductive material to minimize migration of atoms of the conductive material along the interface between a dielectric passivation or capping layer and the interconnect structure. When the interconnect structure is a via structure, each of the layers of the conductive material and each of the grain boundary are formed to be perpendicular to a direction of current flow through the via structure. Such grain boundaries formed between the plurality of layers of conductive material in the via structure minimize charge carrier wind-force along the direction of current flow through the via structure to further minimize electromigration failure of the via structure.

REFERENCES:
patent: 6753251 (2004-06-01), Ritzdorf et al.
patent: 6825120 (2004-11-01), Liu et al.

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