Interconnect structures with linear repair layers and...

Details Interconnect structures with linear repair layers and... Interconnect structures with linear repair layers and...

2008-07-08

2008-07-08

Thomas, Tom (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S640000, C438S638000, C438S622000, C257SE23168

Reexamination Certificate

active

07396762

ABSTRACT:
Interconnect structures that include a conformal liner repair layer bridging breaches in a liner formed on roughened dielectric material in an insulating layer and methods of forming such interconnect structures. The conformal liner repair layer is formed of a conductive material, such as a cobalt-containing material. The conformal liner repair layer may be particularly useful for repairing discontinuities in a conductive liner disposed on roughened dielectric material bordering the trenches and vias of damascene interconnect structures.

REFERENCES:
patent: 4184909 (1980-01-01), Chang et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6429519 (2002-08-01), Uzoh
patent: 6794940 (2004-09-01), Suzuki
patent: 2003/0207560 (2003-11-01), Dubin et al.
patent: 2005/0112864 (2005-05-01), Clevenger et al.
patent: 2006216787 (2006-08-01), None

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