Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-11-22
2010-02-23
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C438S650000, C257SE21166, C257SE21169, C257SE21309, C257SE21569, C257SE21577, C257SE21582
Reexamination Certificate
active
07666781
ABSTRACT:
Interconnect structures including liner layers that are non-planar with at least the adjacent insulating layer and at least one capping layer on conductive features embedded in the insulating layer. The interconnect structure includes an insulating layer of a dielectric material having a top surface and a bottom surface between the top surface and a substrate. An opening, such as a trench, has sidewalls extending from the top surface of the insulating layer toward the bottom surface and is at least partially filled by a conductive feature. A capping layer is disposed on at least a top surface of the conductive feature. A conductive liner layer is disposed between the insulating layer and the conductive feature along at least the sidewalls of the opening. The conductive liner layer has sidewall portions projecting above the top surface of the insulating layer adjacent to the sidewalls of the opening.
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Hsu Louis Lu-Chen
Mandelman Jack Allan
Tonti William Robert
Yang Chih-Chao
International Business Machines - Corporation
Tran Long K
Wood Herron & Evans LLP
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