Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-08
2011-03-08
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S680000, C438S687000, C257SE21006, C257SE21170, C257SE21278, C257SE21293, C257SE21311
Reexamination Certificate
active
07902061
ABSTRACT:
A method of making an interconnect structure: which includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric material; and depositing an encasing cap over the extended portion of the interconnect structure.
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Clevenger Lawrence A.
Dalton Timothy J.
Hon Wong Keith Kwong
Hsu Louis C.
Radens Carl
Connolly Bove & Lodge & Hutz LLP
International Business Machines - Corporation
Nhu David
Percello Louis
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