Interconnect structures for semiconductor devices

Details Interconnect structures for semiconductor devices Interconnect structures for semiconductor devices

2007-04-23

2010-02-02

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S627000, C438S687000, C438S762000, C438S767000, C257SE21579

Reexamination Certificate

active

07655556

ABSTRACT:
A cap layer for a copper interconnect structure formed in a first dielectric layer is provided. In an embodiment, the cap layer may be formed by an in-situ deposition process in which a process gas comprising germanium, arsenic, tungsten, or gallium is introduced, thereby forming a copper-metal cap layer. In another embodiment, a copper-metal silicide cap is provided. In this embodiment, silane is introduced before, during, or after a process gas is introduced, the process gas comprising germanium, arsenic, tungsten, or gallium. Thereafter, an optional etch stop layer may be formed, and a second dielectric layer may be formed over the etch stop layer or the first dielectric layer.

REFERENCES:
patent: 5126574 (1992-06-01), Gallagher
patent: 5403779 (1995-04-01), Joshi et al.
patent: 6046108 (2000-04-01), Liu et al.
patent: 6071808 (2000-06-01), Merchant et al.
patent: 6136682 (2000-10-01), Hegde et al.
patent: 6287970 (2001-09-01), Merchant et al.
patent: 6368961 (2002-04-01), Lopatin et al.
patent: 6521523 (2003-02-01), Lee et al.
patent: 6607976 (2003-08-01), Chen et al.
patent: 6660634 (2003-12-01), Ngo et al.
patent: 2002/0055223 (2002-05-01), Kutsunai et al.
patent: 2007/0075428 (2007-04-01), Wang et al.

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