Interconnect structure with low k dielectric materials and metho

Details Interconnect structure with low k dielectric materials and metho Interconnect structure with low k dielectric materials and metho

1998-08-28

2000-10-03

Bowers, Charles

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430271, 438637, 438620, 438624, G03C 176

Patent

active

06127089&

ABSTRACT:
A damascene structure and method of making the same in a low k dielectric material employs an imageable layer in which the damascene pattern is provided. The imageable layer is a convertible layer that upon exposure to the plasma etch that etches the low k dielectric material, converts the silicon-rich imageble layer into a mask layer containing silicon dioxide, for example. The low k dielectric material is protected from further etching by the mask thus created.

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