Interconnect structure with a barrier-redundancy feature

Details Interconnect structure with a barrier-redundancy feature Interconnect structure with a barrier-redundancy feature

2007-10-26

2009-10-20

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S627000, C438S629000, C438S643000, C257SE21320, C257SE21347, C257SE21475, C257SE21685

Reexamination Certificate

active

07605072

ABSTRACT:
An interconnect structure that includes a barrier-redundancy feature which is capable of avoiding a sudden open circuit after an electromigration (EM) failure as well as a method of forming the same are provided. In accordance with the present invention, the barrier-redundancy feature is located within preselected locations within the interconnect structure including in a wide line region, a thin line region or any combination thereof. The barrier-redundancy feature includes an electrical conductive material located between, and in contact with, a conductive line diffusion barrier of a conductive line and a via diffusion barrier of an overlying via. The presence of the inventive barrier-redundancy feature creates an electrical path between the via diffusion barrier along the sidewalls of the via and the conductive line diffusion barrier along the sidewalls of the conductive line. This electrical path generated by the inventive barrier-redundancy feature can avoid a sudden open circuit resulting from EM failure at the bottom of the via. The presence of the inventive barrier-redundancy feature within an interconnect structure provides sufficient time for chip replacement or system operation.

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