Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-11-01
2005-11-01
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000
Reexamination Certificate
active
06960519
ABSTRACT:
Methods and conductive interconnect structures are provided for preventing cracks in a dielectric layer on a substrate. Substantially half cylindrical or cylindrical trench openings are formed within at least one dielectric layer, which are then filled with a high conductivity metal for forming substantially half cylindrical or cylindrical wires. The rounded bottom portions of the substantially half cylindrical wires, or the rounded bottom and top portions of the substantially half cylindrical wires, avoid any propagation points for starting cracks in the dielectric layer, as compared to conventional rectangular conductors having angled edges, which in fact are propagation points for initiating cracks. The substantially half cylindrical or cylindrical wires also reduce the line-to-line capacitance between neighboring wires, substantially eliminate any high stress points in the dielectric layer, reduce mechanical stresses induced on the IC and increase the overall mechanical strength of the IC.
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Dalton Timothy J.
Fitzsimmons John A.
Gambino Jeffrey P.
Nicholson Lee M.
Simon Andrew H.
Abate Joseph P.
Dang Phuc T.
DeLio & Peterson LLC
Nowak Kelly M.
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