Interconnect structure for semiconductor package

Details Interconnect structure for semiconductor package Interconnect structure for semiconductor package

2006-07-19

2008-11-04

Zarneke, David A (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

C257S621000, C257SE23168

Reexamination Certificate

active

07446424

ABSTRACT:
A semiconductor device includes a semiconductor substrate having top and bottom surfaces, the top surface having at least one device region thereon. At least one trench opening is formed through the substrate from the bottom surface and connecting to the device region. A layer of conductive material is deposited in the at least one trench opening and partially fills the trench opening. A layer of conductive adhesive is deposited over the layer of conductive material and fills a remaining portion of the trench opening.

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Xintec Inc., “Wafer Level Innovative Pack”, at http://www.xintec.com.tw/product/main.htm on Feb. 9, 2006, pp. 1-4.

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