Interconnect structure diffusion barrier with high nitrogen...

Details Interconnect structure diffusion barrier with high nitrogen... Interconnect structure diffusion barrier with high nitrogen...

2006-08-29

2006-08-29

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000, C257S753000

Reexamination Certificate

active

07098537

ABSTRACT:
In an interconnect structure of an integrated circuit, a diffusion barrier film in a damascene structure is formed of a film having the composition TaNx, where x is greater than 1.2 and with a thickness of 0.5 to 5 nm.

REFERENCES:
patent: 6117769 (2000-09-01), Nogami et al.
patent: 6346745 (2002-02-01), Nogami et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6784096 (2004-08-01), Chen et al.
patent: 2001/0041250 (2001-11-01), Werkhoven et al.
patent: 2002/0030222 (2002-03-01), Agarwal
patent: 2003/0032281 (2003-02-01), Werkhoven et al.

Affiliated with

Also associated with

Rating

Interconnect structure diffusion barrier with high nitrogen... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Interconnect structure diffusion barrier with high nitrogen..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Interconnect structure diffusion barrier with high nitrogen... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3646117