Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-02-04
2010-12-07
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S620000, C438S639000, C438S640000, C438S645000
Reexamination Certificate
active
07846834
ABSTRACT:
A semiconductor structure is provided that includes a lower interconnect level including a first dielectric material having at least one conductive feature embedded therein; a dielectric capping layer located on the first dielectric material and some, but not all, portions of the at least one conductive feature; and an upper interconnect level including a second dielectric material having at least one conductively filled via and an overlying conductively filled line disposed therein, wherein the conductively filled via is in contact with an exposed surface of the at least one conductive feature of the first interconnect level by an anchoring area. Moreover, the conductively filled via and conductively filled line of the inventive structure are separated from the second dielectric material by a single continuous diffusion barrier layer. As such, the second dielectric material includes no damaged regions in areas adjacent to the conductively filled line. A method of forming such an interconnect structure is also provided.
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Murray Conal E.
Yang Chih-Chao
Diallo Mamadou
International Business Machines - Corporation
Percello, Esq. Louis J.
Richards N Drew
Scully , Scott, Murphy & Presser, P.C.
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