Interconnect metallization method having thermally treated...

Details Interconnect metallization method having thermally treated... Interconnect metallization method having thermally treated...

2007-10-29

2009-10-13

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21495

Reexamination Certificate

active

07601638

ABSTRACT:
A method for manufacturing a semiconductor device includes forming, on a substrate having a recessed portion on a surface, a plating film which is at least buried in the recessed portion and has a higher impurity concentration in an upper portion than in a lower portion, thermally treating the plating film, and removing the thermally treated plating film except for a portion buried in the recessed portion.

REFERENCES:
patent: 6235406 (2001-05-01), Uzoh
patent: 6949832 (2005-09-01), Kunishima et al.
patent: 2004/0079646 (2004-04-01), Hirao
patent: 2004/0231996 (2004-11-01), Webb et al.
patent: 2005/0095847 (2005-05-01), Kunishima et al.
patent: 2005/0272258 (2005-12-01), Morita et al.
patent: 2006/0027931 (2006-02-01), Takewaki et al.
patent: 2006/0237319 (2006-10-01), Furuya et al.
patent: 2007/0080067 (2007-04-01), Gu et al.
patent: 1494129 (2004-05-01), None
patent: 2004-40022 (2004-02-01), None
patent: 2005-223059 (2005-08-01), None

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