Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-23
2005-08-23
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S301000, C438S591000, C438S706000
Reexamination Certificate
active
06933189
ABSTRACT:
A method and structure for a transistor device comprises forming a source, drain, and trench region in a substrate, forming a first insulator over the substrate, forming a gate electrode above the first insulator, forming a pair of insulating spacers adjoining the electrode, converting a portion of the first insulator into a metallic film, converting the metallic film into one of a silicide and a salicide film, forming an interconnect region above the trench region, forming an etch stop layer above the first insulator, the trench region, the gate electrode, and the pair of insulating spacers, forming a second insulator above the etch stop layer, and forming contacts in the second insulator. The first insulator comprises a metal oxide material, which comprises one of a HfOxand a ZrOx.
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Clevenger Lawrence A.
Hsu Louis L.
Radens Carl J.
Shepard, Jr. Joseph F.
Lebentritt Michael
McGinn & Gibb PLLC
Pompey Ron
Trepp, Esq. Robert M.
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