Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2009-11-18
2011-10-25
Smith, Matthew (Department: 2895)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S401000, C438S412000, C438S424000, C438S432000, C438S437000, C257SE21546
Reexamination Certificate
active
08043933
ABSTRACT:
Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
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PCT International Search Report and Written Opinion dated Jun. 16, 2010 for International Application No. PCT/US2009/065088.
Chang Mei
Ge Zhenbin
Hung Hoiman (Raymond)
Ingle Nitin
Kao Chien-Teh
Applied Materials Inc.
Lee Kyoung
Patterson & Sheridan L.L.P.
Smith Matthew
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