Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-02-27
2007-02-27
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S656000, C257SE21203
Reexamination Certificate
active
10851750
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, includes forming a polysilicon gate electrode (250) over a substrate (210) and forming source/drain regions (610) in the substrate (210) proximate the polysilicon gate electrode (250). The method further includes forming a protective layer (710) over the source/drain regions (610) and the polysilicon gate electrode (250), then removing the protective layer (710) from over a top surface of the polysilicon gate electrode (250) while leaving the protective layer (710) over the source/drain regions (250). After the protective layer (710) has been removed from over the top surface of the polysilicon gate electrode (250), the polysilicon gate electrode (250) is silicided to form a silicided gate electrode (1310). The protective layer (710) is also removed from over the source/drain regions (610) and source/drain contact regions (1610) are formed.
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Jiang Ping
Lu Jiong-Ping
Shinn Gregory
Brady III W. James
Chaudhari Chandra
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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