Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-25
2010-06-08
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S365000
Reexamination Certificate
active
07732872
ABSTRACT:
A metal gate stack containing a metal layer having a mid-band-gap work function is formed on a high-k gate dielectric layer. A threshold voltage adjustment oxide layer is formed over a portion of the high-k gate dielectric layer to provide devices having a work function near a first band gap edge, while another portion of the high-k dielectric layer remains free of the threshold voltage adjustment oxide layer. A gate stack containing a semiconductor oxide based gate dielectric and a doped polycrystalline semiconductor material may also be formed to provide a gate stack having a yet another work function located near a second band gap edge which is the opposite of the first band gap edge. A dense circuit containing transistors of p-type and n-type with the mid-band-gap work function are formed in the region containing the threshold voltage adjustment oxide layer.
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Cheng Kangguo
Chudzik Michael P.
Divakaruni Ramachandra
Wang Geng
Wong Robert C.
Andújar Leonardo
International Business Machines - Corporation
Klein Jordan
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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