Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-13
2009-06-30
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21619
Reexamination Certificate
active
07553732
ABSTRACT:
A method for constraining lateral growth of gate caps formed during an epitaxial silicon growth process to achieve raised source/drain regions on poly silicon is presented. The method is appropriate for integration into a manufacturing process for integrated circuit semiconductor devices. The method utilizes selective etch processes, dependant upon the material comprising the protective layer (hard mask) over the gate and the material of the spacers, e.g., oxide mask
itride spacers, or nitride mask/oxide spacers.
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Brown David E.
Luning Scott D.
Advanced Micro Devices , Inc.
Coleman W. David
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