Integration of silicon carbide into DRAM cell to improve...

Details Integration of silicon carbide into DRAM cell to improve... Integration of silicon carbide into DRAM cell to improve...

2006-03-21

2006-03-21

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S247000

Reexamination Certificate

active

07015091

ABSTRACT:
A DRAM memory cell and a method of making a DRAM memory cell are provided. The DRAM memory cell includes a semiconductor substrate, including a trench formed therein and a buried plate region, at least a first doped region and a second doped region provided on a sidewall of the trench above the buried plate region in the substrate, where the first doped region contains carbon and the second doped region contains germanium provided in a portion of the first region, a dielectric layer formed on the bottom and sidewall of the trench, at least one polysilicon layer deposited in the trench and on the dielectric layer to cover the dielectric layer, and a transistor formed on a surface of the semiconductor substrate.

REFERENCES:
patent: 6265279 (2001-07-01), Radens et al.
patent: 6355518 (2002-03-01), Wu et al.
patent: 6391705 (2002-05-01), Hsiao et al.
patent: 6444524 (2002-09-01), Chung et al.
patent: 6551875 (2003-04-01), Tsao
patent: 6734106 (2004-05-01), Chung et al.
patent: 2005/0170581 (2005-08-01), Chou et al.
Ritu Tyagi et al., Self-Enclosed vs. LOPOS-Terminated Lateral Planar p+n and n+p Junctions in 3C-SiC/Si, IEEE, 1996, pp. 115-118.
Takashi Uchino et al., MOSFETs with Ultrashallow Junction and Minimum Drain Area Formed by Using Solid-Phase Diffusion from SiGe, IEEE Transactions on Electron Devices, vol. 48, No. 7, Jul. 2001, pp. 1406-1411.
S.P. Wong et al., Phase Formation and Field Emission Properties of SiC/Si Heterostructures Formed by MEVVA Implantation, IEEE, 1998, pp. 92-96.
Xiang Lu et al., SiGe and SiGeC Surface Alloy Formation Using High-dose Implantation and Solid Phase Epitaxy, IEEE, 1997, pp. 686-689.

Affiliated with

Also associated with

Rating

Integration of silicon carbide into DRAM cell to improve... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integration of silicon carbide into DRAM cell to improve..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integration of silicon carbide into DRAM cell to improve... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3581068