Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-23
2006-05-23
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S622000, C438S685000
Reexamination Certificate
active
07049226
ABSTRACT:
A method and apparatus for depositing a tantalum nitride barrier layer is provided for use in an integrated processing tool. The tantalum nitride is deposited by atomic layer deposition. The tantalum nitride is removed from the bottom of features in dielectric layers to reveal the conductive material under the deposited tantalum nitride. Optionally, a tantalum layer may be deposited by physical vapor deposition after the tantalum nitride deposition. Optionally, the tantalum nitride deposition and the tantalum deposition may occur in the same processing chamber.
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Chang Mei
Chung Hua
Maity Nirmalya
Mosely Roderick Craig
Yu Jick
Ghyka Alexander
Patterson & Sheridan LLP
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