Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-04
2006-07-04
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S654000
Reexamination Certificate
active
07071093
ABSTRACT:
An integrated method comprises providing a low dielectric material, applying a first treatment altering a first property of the low dielectric material, and applying a second treatment altering a second property of the treated low dielectric material and producing a lower dielectric material with better mechanical stability.
REFERENCES:
patent: 5287081 (1994-02-01), Kinard et al.
patent: 6051443 (2000-04-01), Ghio et al.
patent: 6333215 (2001-12-01), Matsuda et al.
patent: 6383951 (2002-05-01), Li
patent: 6465372 (2002-10-01), Xia et al.
patent: 6486061 (2002-11-01), Xia et al.
patent: 6559070 (2003-05-01), Mandal
patent: 6583046 (2003-06-01), Okada et al.
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6602801 (2003-08-01), Kong et al.
patent: 6635575 (2003-10-01), Xia et al.
patent: 6861339 (2005-03-01), Chen et al.
patent: 6899857 (2005-05-01), Pheng et al.
patent: 2003/0008528 (2003-01-01), Xia et al.
patent: 2003/0041803 (2003-03-01), Kunitomo et al.
patent: 2003/0077857 (2003-04-01), Xia et al.
patent: 2003/0100691 (2003-05-01), Lee et al.
patent: 2003/0198742 (2003-10-01), Vrtis et al.
patent: 2003/0211244 (2003-11-01), Li et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2003/0232495 (2003-12-01), Moghadam et al.
patent: 2004/0023485 (2004-02-01), Pan et al.
patent: 2005/0042884 (2005-02-01), Hyodo et al.
patent: 2005/0124168 (2005-06-01), Nagahara et al.
“IITC 2003: Searching for Better Low-K Solutions”, Jun. 16, 2003, 2 pages, V10n24, JSR Micro Materials Innovation.
Chang Huilin
Liang Mong-Song
Lu Yung-Cheng
LandOfFree
Integrated treatment method for obtaining robust low... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated treatment method for obtaining robust low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated treatment method for obtaining robust low... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3546323