Integrated structure pad assembly for lead bonding

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant

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438546, 438597, 438611, 438612, 438621, H01L 2128, H01L 2122, H01L 2160

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active

058888896

ABSTRACT:
A process for manufacturing an integrated structure pad assembly for wire bonding to a power semiconductor device chip including a chip portion having a top surface covered by a metallization layer which has a first sub-portion wherein functionally active elements of the power device are present. The chip portion has at least one second sub-portion wherein no functionally active elements of the power device are present. The top surface of the at least one second sub-portion is elevated with respect to the first sub-portion to form at least one protrusion which forms a support surface for a wire.

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