Integrated sputtering target assembly

Details Integrated sputtering target assembly Integrated sputtering target assembly

1995-05-24

1996-10-15

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419213, 20429803, 20429807, C23C 1434

Patent

active

055650716

ABSTRACT:
A target plate assembly completely covers and seals against a top opening of a sputtering processing chamber. Cooling liquid connections are provided only from the perimeter of the target assembly. When a top vacuum chamber seals the side opposite the pressure chamber, the pressure on both sides of the target assembly is nearly equalized. Large thin target assemblies, such as large flat plates used for flat panel displays can be sputtered effectively and uniformly without adverse sputtering effects due to target deflection or cooling deficiencies.
A target, target backing plate, and cover plate form the target plate assembly. The sputtering target assembly includes an integral cooling passage. A series of grooves are constructed in either the target backing plate or the target backing cooling cover plate, which are then securely bonded to one another. The sputtering target can be a single monolith with a target backing plate or can be securely attached to the target backing plate by one of any number of conventional bonding methods. Tantalum to titanium, titanium to titanium and aluminum to titanium, diffusion bonding can be used.
The energized target assembly is protected from adjacent components by overlapping insulators to prevent accidents and isolate the target assembly from other components. An electrical connection to the target assembly remains unconnected until a vacuum is produced in the top chamber.

REFERENCES:
patent: 3630881 (1971-12-01), Lester et al.
patent: 3956093 (1976-05-01), McLeod
patent: 4100055 (1978-07-01), Rainey
patent: 4116806 (1978-09-01), Love et al.
patent: 4166018 (1979-08-01), Chapin
patent: 4175030 (1979-11-01), Love et al.
patent: 4318796 (1982-03-01), Nishiyama et al.
patent: 4405436 (1983-09-01), Kobayashi et al.
patent: 4430190 (1984-02-01), Eilers et al.
patent: 4444643 (1984-04-01), Garrett
patent: 4491509 (1985-01-01), Krause
patent: 4500409 (1985-02-01), Boys et al.
patent: 4564435 (1986-01-01), Wickersham
patent: 4680061 (1987-07-01), Lamont, Jr.
patent: 4714536 (1987-12-01), Freeman et al.
patent: 4826584 (1989-05-01), dos Santos Pereiro Ribeiro
patent: 4839011 (1989-06-01), Ramalingam et al.
patent: 4904362 (1990-02-01), Gaertner et al.
patent: 4978437 (1990-12-01), Wirz
patent: 5096562 (1992-03-01), Boozenny et al.
patent: 5130005 (1992-07-01), Hurwitt et al.
patent: 5171415 (1992-12-01), Miller et al.
patent: 5180478 (1993-01-01), Hughes
patent: 5244556 (1993-09-01), Inoue
"Influence of Surface Preparation on the Diffusion Welding of High Strength Aluminum Alloys," Ed. D. J. Stephenson, published in Diffusion Bonding 2, pp. 101-110.
"Diffusion Bonding of Ti-6A1-4V Alloy: Metallurgical Aspects and Mechanical Properties," Ed. D. J. Stephenson, published in Diffusion Bonding 2, pp. 144-157.
Korman, et al., "Research Study of Diffusion Bonding of Refractory Materials, Columbium and Tantalum," Army Materials and Mechanics Research Center, Nov. 10, 1967, pp. 1-27.
S. Pineau, et al., "The Investigation and Production of Titanium-Tantalum Junctions Diffusion Bonded at High Temperature (855.degree. C. to 920.degree. C.), etc.," Royal Aerospace Establishment, Library Translation 2180, Jan. 1990, pp. 3-34.

Affiliated with

Also associated with

Rating

Integrated sputtering target assembly does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated sputtering target assembly, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated sputtering target assembly will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1242966