Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-05-28
2011-10-25
Lee, Eugene (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S309000, C438S312000
Reexamination Certificate
active
08043910
ABSTRACT:
An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer, and a Schottky diode overlying the substrate and overlying the transistor collector layer. The Schottky diode includes a Schottky diode barrier layer structure that desirably is not of the same material, doping, and thickness as the transistor collector layer.
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Ho Anthony
Lee Eugene
McNees Wallace & Nurick LLC
The Boeing Company
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