Static information storage and retrieval – Read/write circuit – Precharge
Patent
1995-01-12
1996-09-03
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Precharge
365149, 365210, G11C 700
Patent
active
055530273
ABSTRACT:
An integrated semiconductor memory circuit includes devices through which second electrodes of memory capacitors of dummy memory cells are to be acted upon with a precharging potential. The precharging potential has a value being 5 to 35% greater than a value of a bit line potential to which bit lines of the semiconductor memory circuit are to be precharged. A method for operating an integrated semiconductor memory circuit includes precharging the bit lines to the bit line potential, prior to a readout of data stored in memory cells, and applying the precharging potential to the second electrodes of the memory capacitors of the dummy memory cells, in the precharging of the bit lines.
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IBM Technical Disclosure Bulletin vol. 31, No. 3, Aug. 1988, pp. 289-290, "Complementary Referencing for Dynamic Array Serving".
Dinh Son
Greenberg Laurence A.
Lerner Herbert L.
Nelms David C.
Siemens Aktiengesellschaft
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