Static information storage and retrieval – Read/write circuit – Precharge
Patent
1995-01-12
1996-11-12
Nguyen, Viet Q.
Static information storage and retrieval
Read/write circuit
Precharge
365210, 365206, 36518909, 365149, G11C 1140
Patent
active
055746942
ABSTRACT:
In an integrated semiconductor memory circuit and a method for its operation, the circuit includes devices by means of which second electrodes of memory capacitors of dummy memory cells are acted upon by a precharging potential. The precharging potential has a value being 5 to 35% greater than a value of half a difference between a supply voltage potential and a reference potential.
REFERENCES:
patent: 4027294 (1977-05-01), Meusburger et al.
patent: 4598389 (1986-07-01), Duvvury et al.
patent: 4658382 (1987-04-01), Tran et al.
patent: 4716549 (1987-12-01), Nakano et al.
patent: 4907200 (1990-03-01), Ikawa et al.
patent: 4982367 (1991-01-01), Miyatake
patent: 5091885 (1992-02-01), Ohsawa
patent: 5255235 (1993-10-01), Miyatake
patent: 5291437 (1994-03-01), Rountree
patent: 5301157 (1994-04-01), Roberts
IBM Technical Disclosure Bulletin vol. 34, No. 8, Jan. 1992, pp. 147-149, "Dummy Cell for Open-. . . ".
Greenberg Laurence A.
Lerner Herbert L.
Nguyen Viet Q.
Siemens Aktiengesellschaft
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